|
|
Datasheet IRF7607 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRF7607 | Power MOSFET(Vdss=20V/ Rds(on)=0.030ohm) PD - 93845 PROVISIONAL
IRF7607
HEXFET® Power MOSFET
1 8
Trench Technology q Ultra Low On-Resistance q N-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel
q
S S S G
A A D D D D
2
7
VDSS = 20V RDS(on) = 0.030Ω
3
6
4
5
T o p V ie w
Description
Ne |
International Rectifier |
|
1 | IRF7607PBF | Power MOSFET ( Transistor ) PD - 95698
IRF7607PbF
l Trench Technology l Ultra Low On-Resistance l N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free
S S S G
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques |
International Rectifier |
Esta página es del resultado de búsqueda del IRF7607. Si pulsa el resultado de búsqueda de IRF7607 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |