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Datasheet GSD669A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GSD669A | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2003/10/23 REVISED DATE :2004/11/29B
GSD669A
Description Features
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The GSD669A is designed for frequency power amplifier.
*Low frequency power amplifier Complementary pair with GSB649A
Package Dimensions
D
E | GTM | transistor |
GSD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GSD-805F | 8-Port 10/100/1000Mbps CONFIDENTIAL
Product Specification of GSD-805F
Product Specification
8-Port 10/100/1000Mbps with 1 SFP shared Desktop Gigabit Ethernet Switch GSD-805F Version 1.0
This document contains confidential proprietary information and is property of PLANET. The contents of this document should not be dis Planet data | | |
2 | GSD1616A | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2003/10/23 REVISED DATE :2004/11/29B
GSD1616A
Description Package Dimensions
D E
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The GSD1616A is designed for audio frequency power amplifier and medium speed switching.
S1
TO-92
A
b1 S E A T IN G PLANE
R GTM transistor | | |
3 | GSD1624 | NPN EPITAXIAL PLANAR TRANSISTOR
GSD1624
Description FEATURES
1/3 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION The GSD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment .
*Adoption of FBET, MBIT processes *Low collector-to-emitter saturation GTM transistor | | |
4 | GSD1857 | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B
GSD1857
POWER TRANSISTOR
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
FEATURES
*High breakdown voltage. (BVCEO=120V). *Low collector output capacitance. (Type.20pF at VCB=10V) *High transition frequency. (fT=80MHz)
GTM transistor | | |
5 | GSD2004A | Dual Common-Anode Small-Signal High-Voltage Switching Diode VISHAY
GSD2004A
Vishay Semiconductors
Dual Common-Anode Small-Signal High-Voltage Switching Diode
Features
• Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability
2 1
1 2 3
Mechanical Data
Case: SOT-23 (TO Vishay Siliconix diode | | |
6 | GSD2004A-GS08 | Dual Common-Anode Small-Signal High-Voltage Switching Diode VISHAY
GSD2004A
Vishay Semiconductors
Dual Common-Anode Small-Signal High-Voltage Switching Diode
Features
• Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability
2 1
1 2 3
Mechanical Data
Case: SOT-23 (TO Vishay Siliconix diode | | |
7 | GSD2004A-GS18 | Dual Common-Anode Small-Signal High-Voltage Switching Diode VISHAY
GSD2004A
Vishay Semiconductors
Dual Common-Anode Small-Signal High-Voltage Switching Diode
Features
• Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability
2 1
1 2 3
Mechanical Data
Case: SOT-23 (TO Vishay Siliconix diode | |
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Número de pieza | Descripción | Fabricantes | |
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