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Datasheet GSB649A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GSB649A | PNP EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B
GSB649A
Description Features Package Dimensions
D
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GSB649A is designed for frequency power amplifier.
*Low frequency power amplifier Complementary pair with GSD669A
E S |  GTM | transistor |
GSB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GSB1132 | PNP EPITAXIAL PLANAR TRANSISTOR
G S B 11 3 2
The GSB1132 is a epitaxial
1/3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R
Description
planar type PNP silicon transistor . (IC/IB = -500mA / -50 mA)
Features
Low VCE(sat). VCE(sat) = -0.2V(Typ.)
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 4. GTM transistor | | |
| 2 | GSB1694 | PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2006/01/18 REVISED DATE :
GSB1694
Description Package Dimensions
PNP EPITAXIAL T RANSISTOR
The GSB1694 is designed for general purpose amplifier applications.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. GTM transistor | | |
| 3 | GSB649A | PNP EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B
GSB649A
Description Features Package Dimensions
D
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GSB649A is designed for frequency power amplifier.
*Low frequency power amplifier Complementary pair with GSD669A
E S GTM transistor | | |
| 4 | GSB772S | PNP EPITAXIAL PLANAR TRANSISTOR
CORPORATION
GSB772S
Description Package Dimensions
D E S1
ISSUED DATE :2004/09/13 REVISED DATE :2004/11/29B
P N P E P I TA X I A L P L A N A R T R A N S I S TO R
The GSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and drive GTM transistor | | |
| 5 | GSB772SS | PNP EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/11/07 REVISED DATE :
GSB772SS
Description
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GSB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
Features
High current output u GTM transistor | | |
| 6 | GSBAS16 | SWITCHING DIODE
CORPORATION
G SB AS16
Description
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A
ISSUED DATE :2006/12/12 REVISED DATE :
S U R F A C E M O U N T, S W I T C H I N G D I O D E
The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The d GTM diode | | |
| 7 | GSBAS40 | Schottky Barrier Diode ( SMD )
CORPORATION
G SB AS40 t h ru G SB AS40- 06
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2005/12/20 REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
These schottky barrier diodes are designed for high speed switching applications, circu GTM diode | |
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