|
|
Datasheet G2N7002K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G2N7002K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B
G2N7002K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 2 640mA
The G2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and |  GTM | mosfet |
G2N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G2N3904 | NPN EPITAXIAL PLANAR TRANSISTOR
CORPORATION
Description Features
ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C
G2N3904
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The G2N3904 is designed for general purpose switching and amplifier applications.
*Pb-free package are available *Collector-Emit GTM transistor | | |
| 2 | G2N3906 | PNP EPITAXIAL PLANAR TRANSISTOR
CORPORATION
G2N3906
Description Features
The G2N3906 is designed for general purpose switching and amplifier applications. *Pb-free package are available *Collector-Emitter Voltage: VCEO=-40V *Collect Dissipation: Pc (max) =625mW *Complementary to G2N3904
ISSUED DATE :2004/08/3 GTM transistor | | |
| 3 | G2N4401 | NPN EPITAXIAL PLANAR TRANSISTOR
CORPORATION
G2N4401
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B
The G2N4401 is designed for general purpose switching and amplifier applications. *Complementary to G2N4403 *High Power Dissipation: 625mW at 25 *Hi GTM transistor | | |
| 4 | G2N4403 | PNP EPITAXIAL PLANAR TRANSISTOR
CORPORATION
G2N4403
Description Features
P NP EP ITAXI AL P L ANAR TANSI STOR
The G2N4403 is designed for general purpose switching and amplifier applications.
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B
*Complementary to G2N4401 *High Power Dissipation: 625mW at 25 *Hig GTM transistor | | |
| 5 | G2N5401 | PNP EPITAXIAL PLANAR TRANSISTOR
CORPORATION
G2N5401
Description Features
P NP EP ITAX I AL PL ANAR TANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B
The G2N5401 is designed for general purpose applications requiring high breakdown voltages.
*Complementary to NPN Type G2N5551 *High Collector-Emitte GTM transistor | | |
| 6 | G2N5551 | NPN EPITAXIAL PLANAR TRANSISTOR
CORPORATION
G2N5551
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B
The G2N5551 is designed for general purpose switching and amplifier applications. *Complementary to PNP Type G2N5401 *High Collector – Emitter Bre GTM transistor | | |
| 7 | G2N7000 | N-CHANNEL ENHANCEMENT MODE MOSFET
ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F
G2N7000
Description
N-CHANNEL ENHANCEMENT MODE MOSFET
The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.
Package Dimensions
D
E S1
TO-92
A GTM mosfet | |
| Esta página es del resultado de búsqueda del G2N7002K. Si pulsa el resultado de búsqueda de G2N7002K se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |