|
|
G2N7002 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | G2N7002 | N-CHANNELTRANSISTOR G2N7002
Description Package Dimensions
1/3 N-CHANNEL TRANSISTOR
N-channel enhancement-mode MOS TRANSISTOR
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 | GTM |
|
1 | G2N7002K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B
G2N7002K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 2 640mA
The G2N7002K utilized advanced processing techniques to achieve the lowes | GTM |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |