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Datasheet FMH23N60ES Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FMH23N60ES | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMH23N60ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalan |  Fuji Electric | mosfet |
FMH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FMH-12R | Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (mA) IR (H) (mA)
Others
Tj (°C)
t rr (ns)
IF /IRP (mA)
t rr (ns)
IF  Sanken electric rectifier | | |
| 2 | FMH06N90E | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
http://www.fujisemi.com
FMH06N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage ( Fuji Electric mosfet | | |
| 3 | FMH07N90E | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
http://www.fujisemi.com
FMH07N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage ( Fuji Electric mosfet | | |
| 4 | FMH09N90E | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMH09N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanch Fuji Electric mosfet | | |
| 5 | FMH11N90E | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMH11N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanch Fuji Electric mosfet | | |
| 6 | FMH13N60ES | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
Super FAP-E3S series
Features
FMH13N60ES
Outline Drawings [mm]
TO-3P(Q)
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistanc Fuji Electric mosfet | | |
| 7 | FMH16N50ES | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
FMH16N50ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalan Fuji Electric mosfet | |
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