SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 PARTMARKING DETAIL 7 – SS BSS138 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Vol

BSS 138 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 138 Type BSS 138 BSS 138 Pin 2 S Marking SSs Pin 3 D VDS 50 V ID 0.22 A RDS(on) 3.5 Ω Package SOT-23 Or

Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:///

May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These produc

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device

BSS138W SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated Product Summary V DS R DS(on),max ID 60 3.5 0.28 V Ω A SOT-323 Type BSS138W BSS138W Package SOT-323 SOT-323 Ordering Code Q6

BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed G G H K M A D SOT-323 Dim B C S Min 0.25 1.15 2.00 0.30