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Datasheet BFR181W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BFR181W | NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) BFR 181W
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181W RFs Q6 |
 Siemens Semiconductor Group |
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| 1 | BFR181W | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Easy to use Pb-free (RoHS compliant) and halogen
free industry standard package with visible leads • Qualification repo |
 Infineon Technologies AG |
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