BD250 PDF Datasheet

BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD249 Series 125 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available E 3 Pin

A A A

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION ·With TO-3PN package ·Complement to type BD249/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absol

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Terminals: Contact Areas Readily Solderable  Polarity: Cathode to Case (Reverse Units Are Available Upon Request and Are Designated By A “R” Suffix, i.e. BD2502R or B

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Terminals: Contact Areas Readily Solderable  Polarity: Cathode to Case (Reverse Units Are Available Upon Request and Are Designated By A “R” Suffix, i.e. BD2502R or B

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Terminals: Contact Areas Readily Solderable  Polarity: Cathode to Case (Reverse Units Are Available Upon Request and Are Designated By A “R” Suffix, i.e. BD2502R or B