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Datasheet BC849W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | BC849W | NPN general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC849W; BC850W NPN general purpose transistors
Product specification Supersedes data of 1997 Jun 20 1999 Apr 12
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES • Low current (max. 100 mA) • Low |
 NXP Semiconductors |
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| 5 | BC849W | PNP Silicon AF Transistors |
 Infineon Technologies AG |
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| 4 | BC849W | Surface mount Si-Epitaxial PlanarTransistors BC 846W ... BC 850W NPN
General Purpose Transistors NPN
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2±0.1
0.3
3
200 mW SOT-323 0.01 g
1±0.1
1.25±0.1
Plastic case Kunststoffgehäuse Weight appr |
 Diotec Semiconductor |
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| 3 | BC849W-AU | (BC846AW-AU - BC850CW-AU) NPN GENERAL PURPOSE TRANSISTORS BC846AW-AU ~ BC850CW-AU
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE FEATURES
• General purpose amplifier applications • NPN epitaxial silicon, planar design • • • • • Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in comply with EU RoH |
 Pan Jit |
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