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Datasheet BAW101S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BAW101S | HIGH VOLTAGE DUAL SWITCHING DIODE NEW PRODUCT
Features
• Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: 150nA at Room Temperature • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • "Green" Device (No |
 Diodes |
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| 2 | BAW101S | High Voltage Double Diode SMD Type
High Voltage Double Diode BAW101S
Diodes
+0.11.25 -0.1
Features
Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V Electrically insulated diodes.
0.1max
SOT-363
1.3+0.1 -0.1 0.65
Unit: mm
0.525
+0.152.3 -0.15
0.36
0.3+0.1 -0.1
2.1+0. |
 Kexin |
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| 1 | BAW101S | High voltage double diode DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAW101S High voltage double diode
Product data sheet
2003 May 13
NXP Semiconductors
High voltage double diode
Product data sheet
BAW101S
FEATURES • Small plastic SMD package • High switching speed: max. 50 ns • High continuous re |
 NXP Semiconductors |
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