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3EZ68 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
8 | 3EZ68 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typ | TRSYS |
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7 | 3EZ68 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) DATA SHEET
3EZ11~3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts
FEATURES
• Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1. | Pan Jit International Inc. |
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6 | 3EZ68 | Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgeh | Diotec Semiconductor |
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5 | 3EZ68D5 | SILICON 3 WATT ZENER DIODES | Microsemi Corporation |
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4 | 3EZ68D5 | 3W SILICON ZENER DIODE | Jinan Gude Electronic Device |
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3 | 3EZ68D5 | SILICON ZENER DIODES 3EZ Series
VZ : 3.9 - 400 Volts PD : 3 Watts
FEATURES :
* Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
| EIC discrete Semiconductors |
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2 | 3EZ68D10 | SILICON ZENER DIODES
3EZ3.9D10 Series
SILICON ZENER DIODES
DO - 41
VZ : 3.9 - 400 Volts PD : 3 Watts
FEATURES :
* Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Fre | EIC |
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1 | 3EZ68D10 | SILICON ZENER DIODES Certificate TH97/10561QM
Certificate TW00/17276EM
3EZ3.9D10 ~ 3EZ200D10
SILICON ZENER DIODES
VZ : 3.9 - 200 Volts PD : 3 Watts
DO - 41
FEATURES :
* Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability | EIC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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