|
![]() |
3DD56 ورقة البيانات |
عدد | رقم القطعة | شرح مفصل | المصنعين | |
5 | 3DD5606 | CASE-RATED BIPOLAR TRANSISTOR R
低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5606 FOR LOW FREQUENCY AMPLIFICATION
3DD5606
主要参数
BVCBO IC PC
MAIN CHARACTERISTICS
1600V 6A 60W
封装 Package TO-220
用途
z z z z z 节能灯 电子镇 | ![]() JILIN SINO-MICROELECTRONICS |
|
4 | 3DD5603 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R
NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD5603(I/U/M/Z)
主要参数
IC VCEO VCBO PC(TO-126) PC(TO-220)
MAIN CHARACTERISTICS
1.5A 800V 1500V 20W 40W
封装 Package
用途
z z z z 充电器 高 | ![]() JILIN SINO-MICROELECTRONICS |
|
3 | 3DD5602 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R
NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD5602(I/U/M)
主要参数
IC VCEO VCBO PC(TO-251/252) PC(TO-126)
MAIN CHARACTERISTICS
1.0A 800V 1500V 10W 20W
封装 Package
用途
z z z z 充电器 | ![]() JILIN SINO-MICROELECTRONICS |
|
2 | 3DD5601 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R
NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD5601(I/U/M)
主要参数
IC VCEO VCBO PC(TO-251/252) PC(TO-126)
MAIN CHARACTERISTICS
1.0A 700V 1400V 10W 20W
封装 Package
用途
z z z z 充电器 | ![]() JILIN SINO-MICROELECTRONICS |
|
1 | 3DD56 | NPN silicon low-frequency high-power transistors 3DD56/3DD57 型 NPN 硅低频大功率晶体管
参数符号
测试条件
规范值
单位
ABCDE F
PCM TC=75℃
10
W
ICM 极 限 Tjm 值 Tstg
Rth
VCE=10V IC=0.2A
3 175 -55~150
10
A ℃ ℃
℃/W
V(BR)CBO
ICB=3mA
≥30
≥50
≥80 | ![]() ETC |
رقم القطعة | شرح مفصل | المصنعين | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
|
B8524 | SAW Components |
![]() TDK |
|
BA6343 | Stepping motor driver |
![]() ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | الاتصال بنا | مجموعة لينك | English |