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Datasheet 2SC4738 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | 2SC4738 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC4738
2SC4738 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.1 W (Tamb=25℃)
.,LCollector current
ICM: 0.15 Collector-base voltage
A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-523
1. BASE 2. EMITTER 3. COLLECTOR
ICELEC |
WEJ |
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5 | 2SC4738 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.) • High hFE: hFE = 120~700 • C |
Toshiba Semiconductor |
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4 | 2SC4738 | Silicon NPN Epitaxial Planar type SMD Type
Silicon NPN Epitaxial Planar type 2SC4738
Transistors
SOT-523
+0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05
Unit: mm
+0.01 0.1-0.01
2
1
+0.15 1.6-0.15
High voltage and high current:VCE=50V,IC=150mA(Max.) Excellent hFE linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) High hFE: =120 to 700
+ |
Kexin |
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3 | 2SC4738 | NPN TRANSISTOR 2SC4738
NPN TRANSISTOR
P b Lead(Pb)-Free
1 3 2
FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –C |
Weitron |
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Número de pieza | Descripción | Fabricantes | |
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