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ورقة البيانات PDF 2SC4738 جستجو



2SC4738 ورقة البيانات

عدد رقم القطعة شرح مفصل المصنعين PDF
6 2SC4738   NPN TRANSISTOR

2SC4738 NPN TRANSISTOR P b Lead(Pb)-Free 1 3 2 FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter V
Weitron
Weitron
PDF
5 2SC4738   Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 m
Toshiba Semiconductor
Toshiba Semiconductor
PDF
4 2SC4738   NPN Plastic Encapsulated Transistor

2SC4738 Elektronische Bauelemente 0.15A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage and High Current High DC Current Gain Complementary to 2SA1832 A M 3
SeCoS
SeCoS
PDF
3 2SC4738   Silicon NPN Epitaxial Planar type

SMD Type Silicon NPN Epitaxial Planar type 2SC4738 Transistors SOT-523 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Unit: mm +0.01 0.1-0.01 2 1 +0.15 1.6-0.15 High voltage and high current:VCE=50V,IC=150mA(Max.) Excellent hFE linearity :hFE(IC=0.1
Kexin
Kexin
PDF
2 2SC4738F   Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F 2SC4738F Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE
Toshiba Semiconductor
Toshiba Semiconductor
PDF
1 2SC4738   NPN EPITAXIAL SILICON TRANSISTOR

RoHS 2SC4738 2SC4738 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.1 W (Tamb=25℃) .,LCollector current ICM: 0.15 Collector-base voltage A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150
WEJ
WEJ
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