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2N6053 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
7 | 2N6053 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR | New Jersey Semiconductor |
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6 | 2N6053 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR | New Jersey Semiconductor |
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5 | 2N6053 | Bipolar PNP Device 2N6053
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0 | Seme LAB |
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4 | 2N6053 | (2N6053 / 2N6054) Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power a | SavantIC |
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3 | 2N6053 | POWER TRANSISTORS(8A/100W) A
A
A
A
| Mospec Semiconductor |
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2 | 2N6053 | POWER COMPLEMENTARY Silicon TRANSISTORS PNP 2N6053 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applica | Comset Semiconductors |
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1 | 2N6053 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
| Central Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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