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Datasheet 2N5660 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N5660 | Bipolar NPN Device 2N5660
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCEO = 200V IC = 1A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 |
 Seme LAB |
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| 3 | 2N5660 | NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
S |
 Microsemi Corporation |
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| 2 | 2N5660 | (2N5660 / 2N5661) Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection st |
 SavantIC |
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| 1 | 2N5660 | Trans GP BJT NPN 200V 2A 3-Pin(2+Tab) TO-66 |
 New Jersey Semiconductor |
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