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2N5401G Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2N5401G | Amplifier Transistors 2N5400, 2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltag | ON Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2N5401 | 600mA, 150V, PNP high-voltage transistor |
NXP Semiconductors |
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2N5401 | 150V, 600mA, PNP General Purpose Amplifier |
Fairchild Semiconductor |
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2N5401 | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
CDIL |
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2N5401 | PNP General Purpose Amplifier |
National Semiconductor |
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2N5401 | 150V, 0.6A, PNP Amplifier Transistor |
ON Semiconductor |
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2N5401 | COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
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2N5401 | -600mA, -150V, PNP EPITAXIAL SILICON TRANSISTOR |
Samsung semiconductor |
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2N5401 | PNP Transistor |
Transys |
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2N5401 | PNP Silicon Amplifier Transistor |
MCC |
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2N5401 | AMPLIFIER TRANSISTOR |
Motorola Semiconductors |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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