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Datasheet 2N3904 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 29 | 2N3904 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5m |
 KEC |
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| 28 | 2N3904 | 0.2A, 40V, GENERAL PURPOSE TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
COLLECTOR 3
2N3903 2N3904*
*Motorola Preferred Device
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Co |
 Motorola Semiconductors |
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| 27 | 2N3904 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3904
DESCRIPTION ·Low Saturation Voltage-
: VCE(sat)= 200mV(Max)@ IC =10mA ·Complement to Type 2N3906.
APPLICATIONS ·Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 |
 Inchange Semiconductor |
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| 26 | 2N3904 | 40V, 200mA, NPN Switching Transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N3904 NPN switching transistor
Product specification Supersedes data of 1997 Jul 15 1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). |
 NXP Semiconductors |
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