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2N3866 ورقة البيانات

عدد رقم القطعة شرح مفصل المصنعين PDF
16 2N3866   Trans GP BJT NPN 30V 0.4A 3-Pin TO-39

New Jersey Semiconductor
New Jersey Semiconductor
PDF
15 2N3866   Chip Type 2C3866A Geometry 1007 Polarity NPN

Data Sheet No. 2C3866A Chip Type 2C3866A Geometry 1007 Polarity NPN Generic Packaged Parts: 2N3866, 2N3866A Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N3866A, 2N3866, 2N3866AUB, SD3866
Semicoa Semiconductor
Semicoa Semiconductor
PDF
14 2N3866   Silicon planar epitaxial overlay transistors

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specificati
NXP
NXP
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13 2N3866   RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Char
Microsemi Corporation
Microsemi Corporation
PDF
12 2N3866   Silicon Planar Epitaxial Transistors

NPN 2N3866 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications. Com
Comset Semiconductor
Comset Semiconductor
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11 2N3866   NPN SILICON HIGH FREQUENCY TRANSISTOR

2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 400 mA 30 V 5.0 W @ TC =
Advanced Semiconductor
Advanced Semiconductor
PDF
10 2N3866A   RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Curre
Advanced Power Technology
Advanced Power Technology
PDF
9 2N3866   RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Curre
Advanced Power Technology
Advanced Power Technology
PDF

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