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Datasheet 2N3019 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 19 | 2N3019 | LOW POWER NPN SILICON TRANSISTOR TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices 2N3019 2N3019S
2N3057A
2N3700 2N3700S
Qualified Level JAN
JANTX JANTXV
JANS
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissip |
 Microsemi |
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| 18 | 2N3019 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3019
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
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 Inchange Semiconductor |
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| 17 | 2N3019 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019 2N3020
TO-39 Metal Can Package
Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amp |
 CDIL |
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| 16 | 2N3019 | Low Power Transistor 2N3019
Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Va |
 ON Semiconductor |
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