|
|
Datasheet 2EZ160D10 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2EZ160D10 | SILICON ZENER DIODES Certificate TH97/10561QM
Certificate TW00/17276EM
2EZ2.7D10 ~ 2EZ200D10 SILICON ZENER DIODES
VZ : 2.7 - 200 Volts PD : 2 Watts
FEATURES :
* Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current ** ±Pb10/ %RotHolSerFanrecee
MECHANIC | EIC | diode |
2EZ Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2EZ | SILICON ZENER DIODES 2EZ Series
VZ : 3.6 - 200 Volts PD : 2 Watts
FEATURES :
* Complete Voltage Range 3.6 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
MECHANICAL DATA
* Case : EIC discrete diode | | |
2 | 2EZ100 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) 2EZ11 THRU 2EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts
FEATURES l Low profile package l Built-in strain relief l l l l l l Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 £g A above 11V High temperatu Pan Jit International diode | | |
3 | 2EZ100 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE TRSYS diode | | |
4 | 2EZ100D10 | SILICON ZENER DIODES Certificate TH97/10561QM
Certificate TW00/17276EM
2EZ2.7D10 ~ 2EZ200D10 SILICON ZENER DIODES
VZ : 2.7 - 200 Volts PD : 2 Watts
FEATURES :
* Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current ** ±Pb10/ %RotHolSerFanrecee
MECHANIC EIC diode | | |
5 | 2EZ100D5 | SILICON ZENER DIODES 2EZ Series
VZ : 3.6 - 200 Volts PD : 2 Watts
FEATURES :
* Complete Voltage Range 3.6 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
MECHANICAL DATA
* Case : EIC discrete diode | | |
6 | 2EZ10D10 | SILICON ZENER DIODES Certificate TH97/10561QM
Certificate TW00/17276EM
2EZ2.7D10 ~ 2EZ200D10 SILICON ZENER DIODES
VZ : 2.7 - 200 Volts PD : 2 Watts
FEATURES :
* Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current ** ±Pb10/ %RotHolSerFanrecee
MECHANIC EIC diode | | |
7 | 2EZ10D5 | SILICON ZENER DIODES 2EZ Series
VZ : 3.6 - 200 Volts PD : 2 Watts
FEATURES :
* Complete Voltage Range 3.6 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
MECHANICAL DATA
* Case : EIC discrete diode | |
Esta página es del resultado de búsqueda del 2EZ160D10. Si pulsa el resultado de búsqueda de 2EZ160D10 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |