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Datasheet 25N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 25N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N60
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.21Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switch |
 Inchange Semiconductor |
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| 1 | 25N60N | FCH25N60N FCH25N60N — N-Channel SupreMOS® MOSFET
December 2013
FCH25N60N
N-Channel SupreMOS® MOSFET
600 V, 25 A, 126 mΩ Features
• RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) • 100% Av |
 Fairchild Semiconductor |
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