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25N06 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 25N06 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 25N06
Preliminary Power MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
DESCRIPTION
The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, a | Unisonic Technologies |
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1 | 25N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N06
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.065Ω(Max) ·Fast Switchin | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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