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Datasheet 1N5401 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5401 | Silicon Rectifiers CREAT BY ART
3A, 50V - 1000V Silicon Rectifiers
1N5400 - 1N5408
Taiwan Semiconductor
FEATURES
- High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halo |  Taiwan Semiconductor | rectifier |
| 2 | 1N5401 | GENERAL PURPOSE RECTIFIERS 1N5400-1N5408
High-reliability discrete products and engineering services since 1977
GENERAL PURPOSE RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standa |  Digitron Semiconductors | rectifier |
| 3 | 1N5401 | 3 AMP PLASTIC SILICON RECTIFIER |  Fuji Electric | rectifier |
| 4 | 1N5401 | 3.0A SILICON RECTIFIER |  Won-Top Electronics | rectifier |
| 5 | 1N5401 | 3.0 Ampere General Purpose Rectifiers 1N5401 - 1N5408 — General-Purpose Rectifiers
August 2015
1N5401 - 1N5408 General-Purpose Rectifiers
Features
• 3.0 A Operation at TA = 75°C with No Thermal Runaway • High Current Capability • Low Leakage
Ordering Information
Part Number 1N5401 1N5402 1N5404 1N5406 1N5408
Top Mark 1N540 |  Fairchild Semiconductor | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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