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PDF BD140 Data sheet ( Hoja de datos )
| Número de pieza | BD140 | |
| Descripción | PNP EPITAXIAL SILICON POWER TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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 1. - 100V, PNP power transistor  Hay una vista previa y un enlace de descarga de BD140 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL SILICON POWER TRANSISTORS
BD136 BD138
BD140
TO126
Plastic Package
ECB
Designed for use as Audio Amplifier and Drivers Utilizing
Complementary BD135, BD137, BD139
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage (RBE=1kΩ)
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation @ Ta=25ºC
Derate above 25ºC
Power Dissipation @ Tc=25ºC
Derate above 25ºC
Power Dissipation @ Tc=70ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VCER
VCBO
VEBO
IC
ICM
IB
PD
PD
PD
Tj, Tstg
BD136
45
45
45
BD138
60
60
60
5.0
1.5
2.0
0.5
1.25
10
12.5
100
8.0
- 55 to +150
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
100
10
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Sustaining Voltage
*VCEO (sus)
IC=30mA, IB=0
BD136
BD138
BD140
Collector Cut Off Current
ICBO VCB=30V, IE=0
VCB=30V, IE=0,
Tc=125ºC
Emitter Cut Off Current
IEBO VEB=5V, IC=0
DC Current Gain
*hFE IC=0.005A, VCE=2V
IC=0.15A, VCE=2V
IC=0.5A, VCE=2V
*Pulse test:- Pulse width=300µs, duty cycle=2%
MIN
45
60
80
25
40
25
BD140
80
100
100
UNIT
V
V
V
V
A
A
A
W
mW/ºC
W
mW/ºC
W
ºC
ºC/W
ºC/W
MAX UNIT
V
V
V
0.1 µA
10 µA
10 µA
250
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BD140.PDF ] | |
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