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BCX55-10 fiches techniques PDF

MCC - NPN Plastic-Encapsulate Transistors

Numéro de référence BCX55-10
Description NPN Plastic-Encapsulate Transistors
Fabricant MCC 
Logo MCC 





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BCX55-10 fiche technique
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
BCX55
BCX55-10
BCX55-16
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Power Dissipation: PCM=0.5W (Tamb=25к)
x Collector Current: ICM=1.0A
x Collector-Base Voltage: V(BR)CBO=60V
x Marking : BCX55=BE, BCX55-10=BG, BCX55-16=BM
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Value
Unit
V(BR)CBO
V(BR)CEO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
60
60
V
V
V(BR)EBO Emitter-Base Breakdown Voltage
5V
IC Collector Current DC
1.0 A
PC Collector Power Dissipation
TJ Junction Temperature Range
TSTG Storage Temperature Range
0.5
-55 to +150
-55 to +150
W
OC
OC
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(on)
fT
Collector-Base Breakdown Voltage
(IC=100uA, IE=0)
60 --- ---
Collector-Emitter Breakdown Voltage
(IC=10mA, IB=0)
60 --- ---
Emitter-Base Breakdown Voltage
(IE=10uA, IC=0)
5 --- ---
Collector Cutoff Current
(VCB=30V, IE=0)
--- --- 0.1
Emitter Cutoff Current
(VEB=5.0V, IC=0)
--- --- 0.1
DC Current Gain
(VCE=2.0V, IC=150mA)
BCX55 63
--- 250
BCX55-10 63
--- 160
BCX55-16 100 --- 250
DC Current Gain
(VCE=2.0V, IC=5.0mA)
40
DC Current Gain
(VCE=2.0V, IC=500mA)
25
Collector-Emitter Saturation Voltage
(IC=500mA,IB=50mA)
--- --- 0.5
Base-Emitter Voltage
(IC=500mA, VCE=2.0V)
--- --- 1
Transition Frequency
(VCE=10V, IC=50mA,
f=100MHz)
130 --- ---
V
V
V
uA
uA
---
V
V
MHz
NPN
Plastic-Encapsulate
Transistors



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Revision: A
www.mccsemi.com
1 of 3
2011/01/01

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