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WILLAS - Plastic-Encapsulate Transistors

Numéro de référence BCX53
Description Plastic-Encapsulate Transistors
Fabricant WILLAS 
Logo WILLAS 





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BCX53 fiche technique
WILLAS FM120-M+
SO1.T0A-8SU9RPFAlCaEsMtiOcU-NET nSCcHaOpTTsKuYlBaAtReRITERraREnCsTiIFsIEtRoSr-s20V- 200V
BCX53 THRU
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Batch process design, excellent power dissipation offers
TRANSISTOLbRoewt t(ePprrNroefPvi lee) rssuerlfeaackeamgoeucnutrerde natpapnl idc at ht ieornmianlorredsei sr ttaon c e .
FEATURES
optimize board space.
Low power loss, high efficiency.
z Pb-FreeHipghaccukraregnet ciaspaabvilaityil,alobwleforward voltage drop.
RoHS••pGHroiugadhrudscruitrnggfeofocrarppoaavcebkrilviitnoyl.gtagceodpreotseuctfifoixn. ”G”
HalogenUlftrraeehigphr-osdpeuecdt sfowritcphaincgk.ing code suffix “H”
z Low VoSltialigcoen epitaxial planar chip, metal silicon junction.
z High CuLMrerIaLed-nS-tfTreDe-1p9a5rt0s0m/2e2e8t environmental standards of
APPLICATIORHoaNHloSSgepnrofrdeuectpfroordpuacct kfoinrgpacockdiengsucfofidxe"Gsu"ffix "H"
z MediumMePcowhearnGiecnaelradlaPtuarposes
z DriverSEtapogxeys: UoLf 9A4u-Vd0ioraAtemd pflalifmieerrsetardant
MARKING:BCCasXe5:3M:oAldHe,dBplCasXti5c,3S-1O0D:-A12K3,HBCX53-16:AL
MAXIMUMRTeArTmIiNnaGlsS:MP(leTattahe=od2dt5e2r0m2i6nuanlsl,essosldoertahbelerwpeirsMeILn-oStTeDd-7)50,
Symbol Polarity : IndicatePdabryamcaethteorde band
Value
VCBO MCooulnleticntgorP-BoasistieonVo: Altangye
VCEO WCeoigllhetc:toArp-EprmoxititmeraVteodlta0.g0e11 gram
-100
-80
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
3. EMITTER
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Unit Dimensions in inches and (millimeters)
V
V
VEBO
EmittMerA-BXaIsMeUVoMltaRgAeTINGS AND ELECTRICAL CHA-R5ACTERISTVICS
IRCatings at C25ollecatmorbCieuntrrteemntperature unless otherwise specified.
-1
A
PSCingle phaCseolhleaclftworavPeo, w60eHr zD, irsessiipstaivtieonof inductive load.
500 mW
  RFθJoAr capaciTtivheelromada,l dReerastiestcaunrcreenFt broym20J%unction To Ambient 250 /W
Tj Junction TRemATpIeNrGaSture
Marking Code
TMsatgximum
Storage Temperature
Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM11350-0MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VRRM
12
20
-5513~30+150
14
40
5105
16
60
18 10
115 120
80 100 150 200
Maximum RMS Voltage
VRMS
14
21
28
35
ELECMTaRximICumADLCCBHlocAkinRgAVColtTagEeRISTICS (Ta=25VuDnCless o20therw3is0e spe4c0ified)50
42
60
56 70 105 140
80 100 150 200
Maximum Average Forward Rectified Current
IO
  Parameter
Symbol 
T est conditions
1.0
Min  Typ
Max
Unit
 
Peak Forward Surge Current 8.3 ms single half
CCoolllleesccuttpooerrri--mbepmaossieettdeborrnebraartekedadkloodwadon(wJvEnoDvEltoCalgmtaeegtheod)
Typical Thermal Resistance (Note 2)
sineV-w(aBvRe)CBOIFSM IC=-100µA,IE=0
V(BR)CEO* IC=-10mA,IB=0
RΘJA
 
EmittTeyrp-ibcaalsJeunbctrioenaCkdapoawcintanvcoel(tNaogtee 1)
 V(BR)EBO CJ IE=-100µA,IC=0
-100
-80
-5
30
40
120
V
 V
 V
ColleOcpteorratcinugt-ToefmfpceurartruerentRange
ICBO TJ VCB=-30V,I-E5=50to +125
  -0.-155 to +1µ5A0
Em ittSetorrcaguet-Toefmf pceurarrtuernetRange
IEBO TSTGVEB=-5V,IC=0
- 65 to +175 -0.1
µA
CHARACTERISTICS
hFE(1)S* YMBOVL CFEM=1-220-VM,HICF=M-153m0-MAH FM140-MH FM150-M6H3FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
DC cMuarxrimenumt gFaoirnward Voltage at 1.0A DC
hFE(2)* VF
Maximum Average Reverse Current at @T A=25℃hFE(3)* IR
Rated DC Blocking Voltage
@T A=125℃
Col lector-emitter saturation voltage
VCE(sat)*
VCE=-2V, IC=-150m0.5A0
VCE=-2V, IC=-0.5A
IC=-0.5A,IB=-50mA
06.730
40 0.5
10
205.805
0.9
-0.5 V
0.92
 
BaseNO-eTmESit: ter voltage
VBE*
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Tran2s-itTihoenrmfarleRqeusiestnanccye From Junction to Ambient
fT
* Pu lse Test
 
CLASSIFICATION OF hFE(2)
VCE=-2V, IC=-0.5A
VCE=-5V,IC=-10mA, f=100MHz
-1 V
50 MHz
RANK
RANGE
2012-06
BCX53
63250
BCX53-10
63160
BCX53-16
100250
WILLAS ELECTRONIC COR
2012-0
WILLAS ELECTRONIC CORP.

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