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SeCoS - NPN Silicon Plastic-Encapsulate Transistor

Numéro de référence BCX19
Description NPN Silicon Plastic-Encapsulate Transistor
Fabricant SeCoS 
Logo SeCoS 





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BCX19 fiche technique
Elektronische Bauelemente
BCX19
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
n Power dissipation
PCM : 0.225 W (Tamb=25OC)
n Collector Current
ICM : 0.5 A
n Collector-base voltage
V(BR)CBO : 50 V
n Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150OC
n RoHS Compliant Product
1
2
3
SOT-23
Collector
3
1
Base
2
Emitter
2. 4
1. 3
Unit: m i l l i m e t e r
ELECTRICAL CHARACTERISTICS(Tamb=25oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(on )
Test conditions
Ic= 10µA, IE=0
Ic =10 mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VCE=20V, IB=0
VEB= 5V, IC=0
VCE=1V, IC=100mA
IC=500mA,IB= 50mA
I C=500mA,VCE=1V
MIN
50
45
5
100
TYP MAX UNIT
V
V
V
0.1 µA
0.1 µA
10 µA
600
0.62 V
1.2 V
MARKING
BCX19 = U1
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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