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Diotec - Silicon Rectifier Diodes

Numéro de référence P2000D
Description Silicon Rectifier Diodes
Fabricant Diotec 
Logo Diotec 





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P2000D fiche technique
P2000A ... P2000M
P2000A ... P2000M
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2013-01-24
Nominal current
Nennstrom
Ø 8±0.1
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Type Weight approx.
Gewicht ca.
Ø 1.2±0.05
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
20 A
50...1000 V
Ø 8 x 7.5 [mm]
2.0 g
Maximum ratings
Type
Typ
P2000A
P2000B
P2000D
P2000G
P2000J
P2000K
P2000M
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
600
800
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TA = 50°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
IFRM
IFSM
i2t
Tj
TS
20 A 1)
100 A 1)
500/550 A
1250 A2s
-50...+175°C
-50...+175°C
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
1
http://www.diotec.com/
© Diotec Semiconductor AG

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