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Datasheet TGF2021-08-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
TGF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TGF1350 | Discrete MESFET Product Data Sheet
Discrete MESFET
TGF1350-SCC
Key Features and Performance
• • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability Recessed Gate Structure
D  TriQuint Semiconductor data | | |
| 2 | TGF1350-SCC | Discrete MESFET Product Data Sheet
Discrete MESFET
TGF1350-SCC
Key Features and Performance
• • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability Recessed Gate Structure
D TriQuint Semiconductor data | | |
| 3 | TGF2018 | 180 um Discrete GaAs pHEMT Applications
Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless
TGF2018
180 um Discrete GaAs pHEMT
Product Features
Frequency Range: DC - 20 GHz 22 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GHz 55% Typical PAE TriQuint Semiconductor data | | |
| 4 | TGF2021-01 | DC-12 GHz Discrete Power pHEMT Advance Product Information
June 8, 2005
DC - 12 GHz Discrete power pHEMT
• • • • • • • •
TGF2021-01
Key Features and Performance
Frequency Range: DC - 12 GHz > 30 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 1mm x 0.35 m Pow TriQuint Semiconductor data | | |
| 5 | TGF2021-02 | DC - 12 GHz Discrete power pHEMT Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
• • • • • • • •
TGF2021-02
Key Features and Performance
Frequency Range: DC - 12 GHz > 33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 2mm x 0.35 TriQuint Semiconductor data | | |
| 6 | TGF2021-04 | DC - 12 GHz Discrete power pHEMT Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
• • • • • • • •
TGF2021-04
Key Features and Performance
Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35 TriQuint Semiconductor data | | |
| 7 | TGF2021-04-SD | DC-4 GHz Packaged Power pHEMT TGF2021-04-SD
DC-4 GHz Packaged Power pHEMT
Key Features
• •
Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance: • OTOI: 39.5 dBm • Noise Figure: 0.6dB • Gain: 16dB • P1dB: 26.5dBm • Input Return Loss: -8 dB • Output TriQuint Semiconductor data | |
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