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Renesas - Silicon N-Channel Power MOSFET Power Switching

Numéro de référence HAT2131R
Description Silicon N-Channel Power MOSFET Power Switching
Fabricant Renesas 
Logo Renesas 





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HAT2131R fiche technique
HAT2131R
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
Low drive current
High density mounting
Capable of 4 V gate drive
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
87 65
1 234
4
G
5678
DDDD
SSS
123
REJ03G1815-0100
Rev.1.00
Jul 17, 2009
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
Pch Note2
350
±20
0.9
7.2
0.9
7.2
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
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