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Numéro de référence | HAT2131R | ||
Description | Silicon N-Channel Power MOSFET Power Switching | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
HAT2131R
Silicon N Channel Power MOS FET
Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
• Capable of 4 V gate drive
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
87 65
1 234
4
G
5678
DDDD
SSS
123
REJ03G1815-0100
Rev.1.00
Jul 17, 2009
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
Pch Note2
350
±20
0.9
7.2
0.9
7.2
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 1 of 6
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Pages | Pages 7 | ||
Télécharger | [ HAT2131R ] |
No | Description détaillée | Fabricant |
HAT2131R | Silicon N-Channel Power MOSFET Power Switching | Renesas |
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