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Datasheet H7N1005DL-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
H7N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | H7N0307AB | Silicon N Channel MOS FET H7N0307AB
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
123
G
D S
REJ03G1120-0300 (P  Renesas data | | |
| 2 | H7N0307AB | Silicon N Channel MOS FET High Speed Power Switching H7N0307AB
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features
• Low on-resistance • RDS(on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220AB
D
G
S
1 2 3
1. Gate 2. Drain (Fra  Hitachi data | | |
| 3 | H7N0307L | Silicon N Channel MOS FET High Speed Power Switching H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1516D (Z) 5th. Edition May 2002 Features
• Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4 D
4
G 1 S 2
1
2
Hitachi data | | |
| 4 | H7N0307LD | Silicon N Channel MOS FET H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1121-0700 (Previous: ADE-208-1516E)
Rev.7.00 Apr 07, 2006
Features
• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RE Renesas data | | |
| 5 | H7N0307LD | Silicon N Channel MOS FET High Speed Power Switching H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1516D (Z)
5th. Edition May 2002
Features
• Low on-resistance RDS(on) =4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
D G
S
4 44
1 2 3
1 2 Hitachi data | | |
| 6 | H7N0307LM | Silicon N Channel MOS FET H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1121-0700 (Previous: ADE-208-1516E)
Rev.7.00 Apr 07, 2006
Features
• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RE Renesas data | | |
| 7 | H7N0307LM | Silicon N Channel MOS FET High Speed Power Switching H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1516D (Z)
5th. Edition May 2002
Features
• Low on-resistance RDS(on) =4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
D G
S
4 44
1 2 3
1 2 Hitachi data | |
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