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Taiwan Semiconductor - Glass Passivated High Efficient Plastic Rectifiers

Numéro de référence EGP20D
Description Glass Passivated High Efficient Plastic Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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EGP20D fiche technique
EGP20A THRU EGP20K
Features
2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 800 Volts
Current
2.0 Amperes
DO-15
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature metallurgically bonded construction
High temperature soldering guaranteed:
300/10 seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
Mechanical Data
Cases: JEDEC DO-15 molded plastic over glass body
Lead: Plated axial leads, solderable per MIL-STD-
750, Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.015 ounce, 0.4 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol EGP EGP EGP EGP EGP EGP EGP
20A 20B 20D 20F 20G 20J 20K
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 300 400 600 800
Maximum RMS Voltage
VRMS 35 70 140 210 280 420 560
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375”(9.5mm) Lead Length @ TA = 55
VDC 50 100 200 300 400 600 800
I(AV)
2.0
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
75.0
Maximum Instantaneous Forward Voltage @ 2.0A
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
VF
IR
0.95
1.25
5.0
100
1.7
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
75
Typical Junction Capacitance ( Note 2 )
Cj 40
35
Typical Thermal Resistance (Note 3)
RθJA
RθJL
60
20
Operating and Storage Temperature Range
TJ ,TSTG
-65 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied VR=4.0 Volts
3. Mount on Cu-Pad Size 10mm x 10mm on P.C.B.
Units
V
V
V
A
A
V
uA
uA
nS
pF
/W
- 588 -

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