|
|
Numéro de référence | XBS104S13R-G | ||
Description | Schottky Barrier Diode | ||
Fabricant | Torex Semiconductor | ||
Logo | |||
1 Page
XBS104S13R-G
Schottky Barrier Diode, 1A, 40V Type
ETR1608-003
■FEATURES
Forward Voltage
: VF=0.49V (TYP.)
Forward Current
: IF(AV)=1A
Repetitive Peak Reverse Voltage : VRM=40V
Environmentally Friendly
: EU RoHS Compliant, Pb Free
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage
VRM
40 V
Reverse Voltage (DC)
VR 40 V
Forward Current (Average)
IF(AV)
1A
Non Continuous
Forward Surge Current *1
IFSM
10
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55~+150
*1:Non continuous high amplitude 60Hz half-sine wave.
A
℃
℃
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■PACKAGING INFORMATION
■MARKING RULE
Cathode Bar
①②
①: 1 (Product Number)
②: Assembly Lot Number
SOD-323A
■PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS104S13R-G
SOD-323A (Halogen & Antimony free)
XBS104S13R
SOD-323A
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
Unit : mm
■ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time *2
*2:trr measurement circuit
SYMBOL
TEST CONDITIONS
VF1 IF=100mA
VF2 IF=1A
IR VR=40V
Ct VR=10V , f=1MHz
trr IF=IR=10mA , irr=1mA , RL=100Ω
Bバiaイsアス
De被v測ic定e ダUイnオdeーrドTest
Pulse Geパneルraスt発rix生器
A
Oscilloscope
オシロスコープ
MIN.
-
-
-
-
-
LIMITS
TYP.
0.34
0.49
4
35
25
Ta=25℃
MAX.
-
0.54
200
-
-
UNIT
V
V
μA
pF
ns
IF
trr
0
irr
IR
t
1/3
|
|||
Pages | Pages 3 | ||
Télécharger | [ XBS104S13R-G ] |
No | Description détaillée | Fabricant |
XBS104S13R-G | Schottky Barrier Diode | Torex Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |