|
|
Numéro de référence | XBS013S1CR-G | ||
Description | Schottky Barrier Diode | ||
Fabricant | Torex Semiconductor | ||
Logo | |||
1 Page
XBS013S1CR-G
Schottky Barrier Diode, 100mA, 30V Type
FEATURES
Ultra Small Package
APPLICATIONS
Low Current Rectification
ETR1619-004
ABSOLUTE MAXIMUM RATINGS
PARMETER
SYMBOL
RATINGS
Ta=25
UNITS
Repetitive Peak Voltage
VRM
30
Reverse Voltage (DC)
VR 30
Forward Current (Average)
Peak Forward Surge Current *1
IF(AV)
IFSM
100
0.6
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 +125
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.
V
V
mA
A
PACKAGING INFORMATION
MARKING RULE
3(Product Number)
a,b,c,d,e,d,e,f,g,h Lot Number
PRODUCT NAME
PRODUCT NAME
XBS013S1CR-G*
PACKAGE
USP-2B02
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
SYMBOL
VF1
IR
TEST CONDITIONS
IF=100mA
VR=25V
MIN.
-
-
LIMITS
TYP.
0.71
-
Ta=25
MAX.
1
2
UNITS
V
A
●NOTES ON USE
1. Please keep away from mechanical stress to the product when mounting or after mounting.
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board
deformation and mechanical stress.
1/3
|
|||
Pages | Pages 3 | ||
Télécharger | [ XBS013S1CR-G ] |
No | Description détaillée | Fabricant |
XBS013S1CR-G | Schottky Barrier Diode | Torex Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |