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Taiwan Semiconductor - NPN Transistor

Numéro de référence BC549A
Description NPN Transistor
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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BC549A fiche technique
Small Signal Product
NPN Transistor
BC546A/B/C ~ BC550A/B/C
Taiwan Semiconductor
FEATURES
- For switching and AF amplifier applications
- These types are subdivided into three groups A, B
and C according to their current gain
- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Total Power dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
PTOT
VCBO
VCEO
VEBO
IC
ICM
TJ , TSTG
500
80
50
30
65
45
30
6
6
6
100
200
-65 to + 150
UNIT
mW
V
V
V
mA
mA
°C
PARAMETER
BC546
Collector-Base Breakdown Voltage
BC547, BC550
BC548, BC549
IC= 100μA
BC546
Collector-Emitter Breakdown Voltage
BC547, BC550
BC548, BC549
IC= 10mA
BC546
Emitter-Base Breakdown Voltage
BC547, BC550
BC548, BC549
IE= 100μA
Collector Base Cutoff Current
Emitter Base Cutoff Current
DC Current Gain
VCB= 30V
VEB= 5 V
Current Gain Group: A
B
C
VCE= 5V,
IC= 2mA
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
MIN
80
50
30
65
45
30
6
6
6
-
-
110
200
420
MAX
-
-
-
15
100
220
450
800
UNIT
V
V
V
nA
nA
V
Document Number: DS_S1405001
Version: B14

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