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BC338-16 fiches techniques PDF

Taiwan Semiconductor - NPN Transistor

Numéro de référence BC338-16
Description NPN Transistor
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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BC338-16 fiche technique
Small Signal Product
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
NPN Transistor
FEATURES
- For switching and AF amplifier applications
- These types are subdivided into three groups -16, -25 and -40, according to their current gain
- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Total Power dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
BC337
BC338
BC337
BC338
BC337
BC338
PTOT
VCBO
VCEO
VEBO
IC
ICM
TJ , TSTG
625
50
30
45
25
5
5
800
1000
-55 to +150
PARAMETER
Collector-Base Breakdown Voltage
BC337
BC338
IC= 100μA
Collector-Emitter Breakdown Voltage BC337
BC338
IC= 2mA
Emitter-Base Breakdown Voltage
BC337
BC338
IE= 100μA
Collector Base Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter On Voltage
BC337
BC338
VCB=50V
VCB=30V
IC=500mA, IB=50mA
VCE=1V, IC=300mA
Transition Frequency
VCE=5V, IC=10mA,
f=50MHz
Output Capacitance
DC Current Gain
VCB=10V, f=1MHz
Current Gain Group: -16
-25
-40
VCE= 5V,
IC= 100mA
VCE= 5V,
IC= 300mA
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
VCE(sat)
VBE(on)
fT
Cob
hFE
MIN
50
30
45
25
5
5
-
-
-
-
100
12
100
160
250
60
MAX
-
-
-
100
100
0.7
1.2
-
-
250
400
630
-
UNIT
mW
V
V
V
mA
mA
°C
UNIT
V
V
V
nA
V
V
MHz
pF
V
Document Number: DS_S1407004
Version: B14

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