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RB501V-40 fiches techniques PDF

RECTRON - SILICON EXPITAXIAL SCHOTTKY BARRIER DIODES

Numéro de référence RB501V-40
Description SILICON EXPITAXIAL SCHOTTKY BARRIER DIODES
Fabricant RECTRON 
Logo RECTRON 





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RB501V-40 fiche technique
RB501V-40
SILICON EXPITAXIAL SCHOTTKY BARRIER DIODES
FEATURES
* Low Forward Voltage Drop
* Flat Lead SOD-523 Small Outline Plastic Package
* Surface Device Type Mounting
* Moisture Sensitivity Level 1
* Clip Bonding Construction,Good Thermal Capability
* Pb Free Version and ROHS Compliant
* Matte Tin(Sn) Lead Finish with Nicke(Ni) Underplate
* Band Indicates Cathode
* Ultra Small Mold Type,Low Forward Voltage,High Reliability
SOD-323
.016 (0.40)
.012 (0.30)
.049 (1.25)
.045 (1.15)
.033 (0.85)
.029 (0.75)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
resistive or inductive load.
Absolute Maximum Ratings (@ TA=25 OC unless otherwise noted)
RATINGS
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current( 60 Hz or Cyc.)
Junction Temperature
Operating and Storage Junction Temperature
SYMBOL
V RRM
VR
IO
I FSM
TJ
TSTG
ELECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted)
CHARACTERISTICS
@IF=10mA
SYMBOL
Forward Voltage
@IF=100mA
VF
@IF=200mA
Reverse Voltage Leakage Current
@VR=10V
@VR=40V
IR
Note: "Fully ROHS Compliant", "100% Sn Plating (Pb-free)".
.005 (0.135)
.005 (0.127)
.065 (1.65)
.061 (1.55)
.028 (0.70)
.024 (0.60)
Dimensions in inches and (millimeters)
RB521S-40
45
40
200
1
150
-55 to + 150
UNITS
Volts
Volts
mAmps
Amps
OC
OC
MIN
TYP
MAX
UNITS
0.16
- 0.30
0.31
- 0.45 Volts
0.41
-
-
- 0.54
- 20 uAmps
- 90
VD 2010-01
REV:O

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