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PDF RB521S-30 Data sheet ( Hoja de datos )
| Número de pieza | RB521S-30 | |
| Descripción | SMD Schottky Barrier Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Small Signal Diode
RB521S-30
200mW, Low VF SMD Schottky Barrier Diode
SOD-523F
B
Features
Low power loss, high current capability, low VF
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
Case : SOD-523F small outline plastic package
Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 1.68±0.5 mg
Marking Code: C
Ordering Information
Part No. Packaging Code Package Packing Marking
RB521S-30
RK
SOD-523F 3K / 7" Reel C
RB521S-30
RKG
SOD-523F 3K / 7" Reel C
CA
D
E
F
Dimensions
A
B
C
D
E
F
Unit (mm)
Min
0.70
1.50
0.25
1.10
0.60
0.10
Max
0.90
1.70
0.40
1.30
0.70
0.14
Unit (inch)
Min Max
0.028 0.035
0.059 0.067
0.010 0.016
0.043 0.051
0.024 0.028
0.004 0.006
Pin Configuration
Suggested PAD Layout
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current @ TL=100℃ (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
Symbol
PD
VRRM
VR
IO
IFSM
RθJA
TJ
TSTG
Value
200
30
30
200
1
500
125
-55 to + 125
Note 1: Test Condition: 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Units
mW
V
V
mA
A
°C/W
°C
°C
Version :A11
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet RB521S-30.PDF ] | |
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