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FMG34S Datasheet دیتاشیت PDF دانلود

دیتاشیت - Thinki Semiconductor - Fast Recovery Epitaxial Diode

شماره قطعه FMG34S
شرح مفصل Fast Recovery Epitaxial Diode
تولید کننده Thinki Semiconductor 
آرم Thinki Semiconductor 


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FMG34S شرح
FMG34S
®
FMG34S
Pb
Pb Free Plating Product
20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-247AD/TO-3P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
FMG34S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
V RRM
I F(AV)
I F(RMS)
I FSM
PD
TJ
T STG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C, Per Diode
TC=110°C, Per Package
TC=110°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
RecommendedM3
400
400
10
20
14
100
83
-40 to +150
-40 to +150
1.1
V
V
A
A
A
A
W
°C
°C
N·m
R θJC
Thermal Resistance
Junction-to-Case
1.5 °C /W
Weight
6g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=400V
VR=400V, TJ=125°C
-- -- 15 µA
-- -- 250 µA
VF Forward Voltage
I F =10A
IF=10A, TJ=125°C
-- 1.00 --
-- 0.87 --
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 20 --
ns
trr Reverse Recovery Time
VR=200V, IF=10A
-- 25 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 2.2 --
A
trr Reverse Recovery Time
VR=200V, IF=10A
-- 46 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 5.5 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/

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