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GW30V60DF fiches techniques PDF

STMicroelectronics - STGW30V60DF

Numéro de référence GW30V60DF
Description STGW30V60DF
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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GW30V60DF fiche technique
STGB30V60DF, STGP30V60DF,
STGW30V60DF, STGWT30V60DF
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet - production data
TAB
3
1
D²PAK
TAB
3
2
1
TO-220
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
C (2, TAB)
Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.85 V (typ.) @ IC = 30 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
G (1) Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
E (3) between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order codes
STGB30V60DF
STGP30V60DF
STGW30V60DF
STGWT30V60DF
Table 1. Device summary
Marking
Package
GB30V60DF
GP30V60DF
GW30V60DF
GWT30V60DF
D²PAK
TO-220
TO-247
TO-3P
Packaging
Tape and reel
Tube
Tube
Tube
October 2013
This is information on a product in full production.
DocID024361 Rev 4
1/22
www.st.com
22

PagesPages 22
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