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C945
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
* Collector current
ICM :
0.15
A
* Collector-base voltage
V(BR)CBO : 60
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
Weight: 0.008 gram
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00)
0.071(1.80)
1
2
3
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage(IC= 1mA, IE=0)
V(BR)CBO
Collector-emitter breakdown voltage(IC= 0.1mA, IB=0)
V(BR)CEO
Emitter-base breakdown voltage(IC= 0.1mA, IB=0)
V(BR)EBO
Collector cut-off current(VCB= 60V, IE=0)
Collector cut-off current(VCB= 45V, IE=0)
ICBO
ICEO
Emitter cut-off current(VEB= 5V, IC=0)
IEBO
DC current gain(VCE= 6V, IC= 1mA)
DC current gain(VCE= 6V, IC= 0.1mA)
hFE
Collector-emitter saturation voltage(IC=100 mA, IB= 10mA)
VCE(sat)
Base-emitter saturation voltage(IC= 100 mA, IB= 10mA)
VBE(sat)
Base-emitter voltage(IE= 310 mA)
VBEF
Transition frequency(VCE= 6V, IC= 10mA, f= 30MHZ)
fT
MIN
60
50
5
-
-
-
130
40
-
-
-
150
CLASSIFICATION OF hFE(1)
RANK
Range
Marking
L
130~200
Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".
TYP
-
-
-
-
-
-
-
-
-
-
-
-
CR
MAX
-
-
-
0.1
0.1
0.1
400
-
0.3
1
1.4
-
H
200~400
UNITS
V
V
V
mA
mA
mA
-
-
V
V
V
MHZ
2007-3