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PDF C945T Data sheet ( Hoja de datos )
| Número de pieza | C945T | |
| Descripción | NPN Silicon Plastic-Encapsulate Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
C945T
NPN Silicon
Plastic-Encapsulate Transistor
FEATURES
Low noise
Excellent hFE linearity
Complementary to A733T
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Value
Units
Collector-Base Voltage
VCBO
60 V
Collector-Emitter Voltage
VCEO
50 V
Emitter-Base Voltage
VEBO
5V
Collector Current Continuous
IC
150 mA
Collector Power Dissipation
PC
400 mW
Junction, Storage Temperature TJ, TSTG 125, -55~125 °C
1
2
3
12 3
1. EMITTER
2. COLLECTOR
3. BASS
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC = 1mA, IE = 0
IC = 100μA, IB = 0
IE = 100mA, IC = 0
60
50
5
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCB = 60V, IE = 0
VCE = 45V
VEB = 5V, IC = 0
VCE = 6V, IC = 1mA
VCE = 6V, IC = 0.1mA
70
40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Power Dissipation
Transition Frequency
Noise Figure
VCE(sat)
VBE(sat)
Cob
fT
NF
IC = 100mA, IB = 10mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = 0, f = 1MHz
VCE=6V, IC=10mA, f=30MHz
VCE=6V, IC=0.1mA,
RG=10 KΩ, f=kMHz
200
Max Units
V
V
V
0.1 μA
0.1 μA
0.1 μA
700
0.3 V
1V
3.0 pF
MHz
10 dB
CLASSIFICATION OF hFE
Rank
O
Range
70-140
Y
120-240
GR
200-400
BL
350-700
01-Jun-2005 Rev. B
Any changing of specification will not be informed individual
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C945T.PDF ] | |
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