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PDF C1815T Data sheet ( Hoja de datos )
| Número de pieza | C1815T | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
C1815T
0.15A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Power Dissipation
CLASSIFICATION OF hFE (1)
Product-Rank C1815T-O C1815T-Y
Range
70~140
120~240
C1815T-GR
200~400
TO-92
GH
J
AD
B
K
E CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
50
5
150
400
125, -55 ~ 125
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
NF
60
50
5
-
-
-
70
-
-
80
-
-
- - V IC=100μA, IE=0
- - V IC=0.1mA, IB=0
- - V IE=100μA, IC=0
- 0.1 μA VCB=60V, IE=0
0.1 μA VCE=50V, IB=0
- 0.1 μA VEB=5V, IC=0
700 VCE=6V, IC=2mA
- 0.25 V IC=100mA, IB=10mA
- 1 V IC=100mA, IB=10mA
- - MHz VCE=10V, IC=1mA, f=30MHz
- 3.5 pF VCB=10V, IE=0, f=1MHz
-
10
dB
VCE=6V, IC=0.1mA, f=1KHz,
RG=10KΩ
http://www.SeCoSGmbH.com/
18-Mar-2010 Rev. B
Any changes of specification will not be informed individually.
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