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Panasonic - NPN Transistor - 2SC1953

Numéro de référence C1953
Description NPN Transistor - 2SC1953
Fabricant Panasonic 
Logo Panasonic 





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C1953 fiche technique
Power Transistors
2SC1953
Silicon NPN epitaxial planar type
For audio system/pre-drive
Complementary to 2SA0914
Features
High collector-emitter voltage (Base open) VCEO
Small collector output capacitance (Common base, input open cir-
cuited) Cob
A complementary pair with 2SA0914, is optimum for the pre-driver
stage of a 60 W to 100 W output amplifier
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
150
150
5
50
100
1
150
55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCEO
VEBO
ICBO
hFE
VCE(sat)
fT
Cob
IC = 100 µA, IB = 0
IE = 10 µA, IC = 0
VCB = 100 V, IE = 0
VCE = 5 V, IC = 10 mA
IC = 30 mA, IB = 3 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
150
5
130
70
V
V
1 µA
330
1V
MHz
3 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE 130 to 220 185 to 330
Publication date: January 2003
SJD00096BED
1

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