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Numéro de référence | HAF2017L | ||
Description | Silicon N-Channel Power MOS FET | ||
Fabricant | Renesas | ||
Logo | |||
HAF2017(L), HAF2017(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G0234-0200Z
(Previous ADE-208-1637 (Z))
Rev.2.00
Apr.13.2004
Descriptions
This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in
over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery)
Outline
D
G Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
LDPAK(L)
4
LDPAK(S)-1
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Apr.13.2004, page 1 of 8
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Pages | Pages 9 | ||
Télécharger | [ HAF2017L ] |
No | Description détaillée | Fabricant |
HAF2017 | Silicon N-Channel Power MOS FET | Renesas |
HAF2017L | Silicon N-Channel Power MOS FET | Renesas |
HAF2017S | Silicon N-Channel Power MOS FET | Renesas |
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