DataSheetWiki


HAF2017L fiches techniques PDF

Renesas - Silicon N-Channel Power MOS FET

Numéro de référence HAF2017L
Description Silicon N-Channel Power MOS FET
Fabricant Renesas 
Logo Renesas 





1 Page

No Preview Available !





HAF2017L fiche technique
HAF2017(L), HAF2017(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G0234-0200Z
(Previous ADE-208-1637 (Z))
Rev.2.00
Apr.13.2004
Descriptions
This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in
over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shutdown circuit
Latch type shutdown operation (Need 0 voltage recovery)
Outline
D
G Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
LDPAK(L)
4
LDPAK(S)-1
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Apr.13.2004, page 1 of 8

PagesPages 9
Télécharger [ HAF2017L ]


Fiche technique recommandé

No Description détaillée Fabricant
HAF2017 Silicon N-Channel Power MOS FET Renesas
Renesas
HAF2017L Silicon N-Channel Power MOS FET Renesas
Renesas
HAF2017S Silicon N-Channel Power MOS FET Renesas
Renesas

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche