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PDF S-LP3407LT1G Data sheet ( Hoja de datos )
| Número de pieza | S-LP3407LT1G | |
| Descripción | P-Channel Enhancement-Mode MOSFET | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS
I D (V GS = -10V)
RDS(ON) (VGS = -10V)
RDS(ON) (VGS = -4.5V)
-30V
-4.1A
< 70mΩ
< 100m Ω
FEATURES
The LP3407LT1G uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
S- Prefix for Automotive and Other Applications Req uiring Uniq ue
Site and Control Change Req uirements; AEC-Q101 Qualified and
PPAP Capable.
ORDERING INFORMATION
Device
LP3407LT1G
S-LP3407LT1G
LP3407LT3G
S-LP3407LT3G
Marking
A07
A07
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP3407LT1G
S-LP3407LT1G
3
1
2
SOT– 23 (TO–236AB)
D
G
S
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation B TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
-30
±20
-4.1
-3.5
-25
1.4
0.9
-55 to 150
Units
V
V
A
W
°C
THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
Units
90 °C/W
125 °C/W
80 °C/W
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Rev .O 1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LP3407LT1G , S-LP3407LT1G
VDC
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
VDC
DUT
Vds
Qgs Qgd
Vds
Vgs
Rg
Vgs
Resistive Switching Test Circuit & Waveforms
RL
Vgs
ton
td(on) tr
toff
t d (o ff)
tf
DUT
Vdd
VDC
Vds
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Vgs
Q rr = - Idt
+
VDC Vdd
-
-Isd
-Vds
-I F
dI/dt
t rr
-I RM
Charge
90%
10%
Vdd
Rev .O 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet S-LP3407LT1G.PDF ] | |
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