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CBRHD-01 fiches techniques PDF

Central Semiconductor - SILICON BRIDGE RECTIFIERS

Numéro de référence CBRHD-01
Description SILICON BRIDGE RECTIFIERS
Fabricant Central Semiconductor 
Logo Central Semiconductor 





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CBRHD-01 fiche technique
CBRHD-01
SURFACE MOUNT
HIGH DENSITY
0.8 AMP
SILICON BRIDGE RECTIFIER
HD DIP CASE
This series is UL listed: file number E130224
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD-01 is a
silicon full wave bridge rectifier mounted in a durable
epoxy surface mount molded case, utilizing glass
passivated chips.
MARKING CODE: CBD1
FEATURES:
Efficient use of board space: requires only 42mm2 of board
space vs. 120mm2 of board space needed for industry
standard 1.0 Amp surface mount bridge rectifier.
50% higher density (Amps/mm2) than the industry standard
1.0 Amp surface mount bridge rectifier.
Glass passivated chips for high reliability.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) (Note1)
Average Forward Current (TA=40°C) (Note 2)
Peak Forward Surge Current
Operating and Storage Junction Temperature
Thermal Resistance (Note 3)
SYMBOL
VRRM
VR
VR(RMS)
IO
IO
IFSM
TJ, Tstg
ΘJA
100
100
70
0.5
0.8
30
-65 to +150
85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR= 100V
IR VR= 100V, TA=125°C
VF IF=400mA
CJ VR=4.0V, f=1.0MHz
5.0
500
1.0
9.0
Notes: (1) Mounted on Glass-Epoxy PCB.
(2) Mounted on Ceramic PCB.
(3) Mounted on PCB with 0.5” x 0.5” copper pads.
UNITS
V
V
V
A
A
A
°C
°C/W
UNITS
µA
µA
V
pF
R2 (4-January 2010)

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