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Numéro de référence | BCW61B | ||
Description | SILICON PLANAR EPITAXIAL TRANSISTORS | ||
Fabricant | CDIL | ||
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1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW61A BCW61B
BCW61C BCW61D
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P silicon transistors
Marking
BCW61A = BA
BCW61B = BB
BCW61C = BC
BCW61D = BD
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (d.c.)
Total power dissipation
Junction temperature
Transition frequency at f: 100 MHz
–VCE = 5 V; –IC = 10 mA
Noise figure at f = 1 kHz
–VCE = 5 V; –IC = 200 mA
–VCES
–VCEO
–IC
Ptot
Tj
max.
max.
max.
max.
max.
32 V
32 V
200 mA
250 mW
150 °C
fT typ. 180 MHz
F typ. 2 dB
Continental Device India Limited
Data Sheet
Page 1 of 3
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Pages | Pages 3 | ||
Télécharger | [ BCW61B ] |
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