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SeCoS - PNP Plastic Encapsulated Transistor

Numéro de référence BCPA1666
Description PNP Plastic Encapsulated Transistor
Fabricant SeCoS 
Logo SeCoS 





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BCPA1666 fiche technique
Elektronische Bauelemente
BCPA1666
-2 A, -50 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
Low Saturation Voltage
Power Amplifier and Switching Application
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7’ inch
CLASSIFICATION OF hFE1
Product
BCPA1666-O
Range
70~140
Marking
WO
BCPA1666-Y
120~240
WY
SOT-89
123
A BCE
EC
4
1
Base
BD
Collector
24
3
Emitter
FG
H
J
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40
3.94
1.40
4.60
4.25
1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
-50
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-5
Collector Current -Continuous
IC
-2
Collector Power Dissipation
PC
0.5
Maximum Junction to Ambient
RθJA
250
Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
-50
-
- V IC= -1mA, IE=0
Collector-emitter breakdown voltage V(BR)CEO
-50
-
- V IC= -10mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
-5
-
--
- - V IE= -1mA, IC=0
-
-100
nA VCB= -50V, IE=0
-
-100
nA VEB= -5 V, IC=0
DC current gain1
Collector-emitter saturation voltage1
Base-emitter saturation voltage1
hFE1
hFE2
VCE(sat)
VBE(sat)
Transition frequency
fT
Output Capacitance
COB
Note:
1. Pulse test: pulse width 300mS, duty cycle2.0%.
http://www.SeCoSGmbH.com/
25-Oct-2012 Rev. A
70
40
-
-
-
-
- 240
VCE= -2V, IC= -500mA
--
VCE= -2V, IC= -1.5A
- -0.5 V IC= -1A, IB= -50mA
- -1.2 V IC= -1A, IB= -50mA
120 - MHz VCE= -2V, IC= -500mA,
- 40 pF fV=C2B0=0-M10HVz, IE=0, f=1MHz
Any changes of specification will not be informed individually.
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